Photoluminescence of InAs quantum dots in n-i-p-i GaAs superlattice
نویسندگان
چکیده
Large blueshift and linewidth increase in photoluminescence ~PL! spectra of InAs quantum dots ~QD’s! in n-i-p-i GaAs superlattice were observed. By increasing the excitation intensity from 0.5 to 32 W/cm, the PL peak position blueshifted 18 meV, and the linewidth increased by 20 meV. Such large changes are due to the state-filling effects of the QD’s resulted from the separation of photogenerated electrons and holes caused by the doping potential.
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